technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com radiation hardened pnp power silicon transistor qualified per mil-prf-19500/545 t4-lds-0131 rev. 1 (091476) page 1 of 4 devices levels 2n5151 2n5153 jansm C 3k rads (si) 2n5151l 2n5153l jansd C 10k rads (si) 2n5151u3 2n5153u3 jansp C 30k rads (si) jansl C 50k rads (si) jansr C 100k rads (si) jansf C 300k rads (si) absolute maximum ratings (t c = +25c unless otherwise noted) parameters / test conditio ns symbol value unit collector-emitter voltage v ceo 80 vdc collector-base voltage v cbo 100 vdc emitter-base voltage v ebo 5.5 vdc collector current i c 2.0 adc total power dissipation 2n5151, 2n5153, l 2n5151, 2n5153, l 2n5151u3, 2n5153u3 2n5151u3, 2n5153u3 @ t a = +25c (1) @ t c = +25c (2) @ t a = +25c (3) @ t c = +25c (4) p t 1.0 10 1.16 100 w operating & storage junction temperature range t j , t stg -65 to +200 c thermal resistance, junction-to case r jc 10 1.75 (u3) c/w note: 1) derate linearly 5.7mw/c for t a > +25 2) derate linearly 66.7mw/c for t a > +25 3) derate linearly 6.63mw/c for t a > +25 4) derate linearly 571mw/c for t a > +25 electrical characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit off charactertics collector-emitter breakdown voltage i c = 100madc, i b = 0 v (br)ceo 80 vdc emitter-base cutoff current v eb = 4.0vdc, i c = 0 v eb = 5.5vdc, i c = 0 i ebo 1.0 1.0 adc madc collector-emitter cutoff current v ce = 60vdc, v be = 0 v ce = 100vdc, v be = 0 i ces 1.0 1.0 adc madc collector-base cutoff current v ce = 40vdc, i b = 0 i ceo 50 adc to-5 2n5151l, 2n5153l (see figure 1) to-39 (to-205ad) 2n5151, 2n5153 u-3 2n5151u3, 2n5153u3 downloaded from: http:///
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com radiation hardened pnp power silicon transistor qualified per mil-prf-19500/545 t4-lds-0131 rev. 1 (091476) page 2 of 4 electrical characteristics parameters / test conditions symbol min. max. unit on charactertics forward-current transfer ratio i c = 50madc, v ce = 5vdc i c = 2.5adc, v ce = 5vdc i c = 5adc, v ce = 5vdc 2n5151 2n5153 2n5151 2n5153 2n5151 2n5153 h fe 20 50 30 70 20 40 90 200 collector-emitter saturation voltage i c = 2.5adc, i b = 250madc i c = 5.0adc, i b = 500madc v ce(sat) 0.75 1.5 vdc base-emitter voltage non-saturation i c = 2.5adc, v ce = 5vdc v be 1.45 vdc base-emitter saturation voltage i c = 2.5adc, i b = 250madc i c = 5.0adc, i b = 500madc v be(sat) 1.45 2.2 vdc dynamic characteristics magnitude of common emitter small-signal short-circuit forward current transfer ratio i c = 500madc, v ce = 5vdc, f = 10mhz 2n5151 2n5153 |h fe | 6 7 common-emitter small-signal short-circuit. forward-current transfer ratio i c = 100madc, v ce = 5vdc, f = 1khz 2n5151 2n5153 h fe 20 50 output capacitance v cb = 10vdc, i e = 0, f = 1.0mhz c obo 250 pf switching characteristics parameters / test conditions symbol min. max. unit turn-on time i c = 5adc, i b1 = 500madc i b2 = -500madc r l = 6 v be(off) = 3.7vdc t on 0.5 s turn-off time i c = 5adc, i b1 = 500madc i b2 = -500madc r l = 6 v be(off) = 3.7vdc t off 1.5 s downloaded from: http:///
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com radiation hardened pnp power silicon transistor qualified per mil-prf-19500/545 t4-lds-0131 rev. 1 (091476) page 3 of 4 switching characteristics (cont.) parameters / test conditions symbol min. max. unit storage time t s 1.4 s fall time i c = 5adc, i b1 = 500madc i b2 = -500madc r l = 6 v be(off) = 3.7vdc t f 0.5 s safe operating area dc tests t c = +25c, 1 cycle, t p = 1.0s test 1 v ce = 5.0vdc, i c = 2.0adc test 2 v ce = 32vdc, i c = 310madc test 3 v ce = 80vdc, i c = 14.5madc figure 1 (to-5, to-39) package dimensions dimensions inches millimeters symbol min max min max notes cd .305 .335 7.75 8.51 6 ch .240 .260 6.10 6.60 hd .335 .370 8.51 9.40 lc .200 tp 5.08 tp 7 ld .016 .021 0.41 0.53 8, 9 ll see notes 8, 9, 12, 13 lu .016 .019 0.41 0.48 8, 9 l 1 .050 1.27 8, 9 l 2 .250 6.35 8, 9 q .050 1.27 6 tl .029 .045 0.74 1.14 4, 5 tw .028 .034 0.71 0.86 3 r .010 0.25 11 45 tp 45 tp 7 p .100 2.54 downloaded from: http:///
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com radiation hardened pnp power silicon transistor qualified per mil-prf-19500/545 t4-lds-0131 rev. 1 (091476) page 4 of 4 notes: 1 dimensions are in inches. 2 millimeters are given for general information only. 3 beyond r (radius) maximum, tw shall be held for a minimum length of .011 inch (0.28 mm). 4 tl measured from maximum hd. 5 outline in this zone is not controlled. 6 cd shall not vary more than .010 inch (0.25 mm) in zone p. this zone is controlled for automatic handling. 7 leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within.007 inch (0.18 mm) radius of true position (tp) at maximum mate rial condition (mmc) relative to tab at mmc. 8 lu applied between l1 and l2. ld applies between l2 and ll minimum. diameter is uncontrolled in l1 and beyond ll minimum. 9 all three leads. 10 the collector shall be electrically and mechanically connected to the case. 11 r (radius) applies to both inside corners of tab. 12 in accordance with asme y14.5m, diameters are equivalent to x symbology. 13 for transistor types 2n5151 and 2n5153, ll is .5 inch (13 mm) minimum, and .75 inch (19 mm) maximum. 14 for transistor types 2n5151l and 2n5153l, ll is 1.5 in ch (38 mm) minimum and 1.75 inch (44.4 mm) maximum. 15 lead designation, depending on device type, shall be as follow s: lead numbering; lead 1 = emitter, lead 2 = base, and lead 3 = collector. figure 2 (u3) package dimmensions dimensions symbol inches millimeters min max min max bl .395 .405 10.04 10.28 bw .291 .301 7.40 7.64 ch .1085 .1205 2.76 3.06 lh .010 .020 0.25 0.51 ll1 .220 .230 5.59 5.84 ll2 .115 .125 2.93 3.17 ls1 .150 bsc 3.81 bsc ls2 .075 bsc 1.91 bsc lw1 .281 .291 7.14 7.39 lw2 .090 .100 2.29 2.54 q1 .030 0.762 q2 .030 0.762 notes: 1 dimensions are in inches. 2 millimeters are given for general information only. 3 terminal 1 - collector, terminal 2 - base, terminal 3 - emitter downloaded from: http:///
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